BSB012NE2LX替代料PC2R4NG,30V180A N管?功率MOS管場(chǎng)效應(yīng)管

型號(hào)：PC2R4NG

電壓電流：30V180A

N管

封裝：TO-220

應(yīng)用：消費(fèi)類工業(yè)類等產(chǎn)品

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?

Features:

1) VDS=30V,ID=180A,RDS(ON)<2.4mΩ@VGS=10V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra low RDS(ON).?

5) Excellent package for good heat dissipation.