電動車控制器中壓大電流MOS管PG4R5NG,80V150A N管 4.5mΩ 典型3.8mΩ

型號：PG4R5NG

電壓電流：80V150A

N管

內(nèi)阻：4.5mΩ 典型3.8mΩ

封裝：TO-220

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications. Features：

1) VDS=80V,ID=150A,RDS(ON)<4.5mΩ@VGS=10V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.