BSB104N08NP3 G替換型號(hào)DH012T2G，100V55A 12mΩ TO-252封裝，用于同步整流
BSB104N08NP3 G替換型號(hào)DH012T2G，100V55A 12mΩ TO-252封裝，用于同步整流
型號(hào)：DH012T2G
電壓電流：100V55A
內(nèi)阻：12mΩ
封裝：TO-252
應(yīng)用：同步整流
Description：
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?
Features：
1) VDS=100V,ID=55A,RDS(ON)<12mΩ@VGS=10V
2) Low gate charge.?
3) Green device available.?
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?
5) Excellent package for good heat dissipation.
