低壓MOS管場效應管DE035PG可替代30P06 P管 -60V-30A 35mΩ
低壓MOS管場效應管DE035PG可替代30P06 P管 -60V-30A 35mΩ
型號:DE035PG
P管
電壓電流:-60V-30A
內(nèi)阻:35mΩ
封裝:TO-252

Description:
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.
Features:
1) VDS=-60V,ID=-30A,RDS(ON)<35mΩ@VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
