RU3070L替代物料DO-004NG-Y/DO-003NG-E,可完全兼容，貨源穩(wěn)定價(jià)格優(yōu)勢(shì)

DO-004NG-Y資料

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

TO-252封裝

1) VDS=30V,ID= A,RDS(ON)<4mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

DO-003NG-E資料

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

TO-252封裝

1) VDS=30V,ID=150A,RDS(ON)<3.3mΩ@VGS=10V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.