NCE2030K替代兼容型號(hào)DB008NG，P TO P替換NCE2030K，TO-252封裝

型號(hào)：DB008NG

N管

電壓電流：20V45A

內(nèi)阻：RDS(ON)< 8mΩ@VGS=4.5V

封裝：TO-252

Description：

This N管?MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?

Features：

1) VDS=20V,ID=45A,RDS(ON)< 8mΩ@VGS=4.5V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.