DE030NG-J替代30N06，國(guó)產(chǎn)功率MOS場(chǎng)效應(yīng)管TO-252封裝 N管 60V30A

型號(hào)：DE030NG-J

電壓電流：60V30A

N管

封裝：TO-252

內(nèi)阻：30mΩ

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.?

Features：

1) VDS=60V,ID=30A,RDS(ON)<30mΩ@VGS=10V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.