功率MOS場效應(yīng)管DC010PG可替代60P03 P管 -30V-60A 10mΩ

型號：DC010PG

P管

電壓電流：-30V-60A

內(nèi)阻：10mΩ

封裝：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=55A,RDS(ON)<10mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.