RU20130L替換物料DC003NG-E，P TO P兼容RU20130L低壓場(chǎng)效應(yīng)管MOS管

型號(hào)：DC003NG-E

N管

電壓電流：30V150A

內(nèi)阻：2.3mΩ

封裝：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=150A,RDS(ON)<3.3mΩ@VGS=10V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.